Inchange Semiconductor Product Specification 2N6129 2N6130 2N6131 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High power dissipation ・Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS ・Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2N6129 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N6130 Open emitter Emitter-base voltage 60 2N6131 80 2N6129 40 2N6130 UNIT 40 Open base 2N6131 VEBO VALUE 60 V V 80 Open collector 5 V IC Collector current 7 A IB Base current 3 A PT Total power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 2.5 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification 2N6129 2N6130 2N6131 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6129 VCEO(SUS) Collector-emitter sustaining voltage 2N6130 MIN TYP. MAX UNIT 40 IC=0.1A ;IB=0 V 60 80 2N6131 2N6129 VCEsat Collector-emitter saturation voltage 1.4 2N6130 IC=7A;IB=1.2A V 2N6131 VBE ICEV Base-emitter on voltage Collector cut-off current 1.8 IC=2.5A ; VCE=4V 1.4 2N6129 VCE=40V;VBE=1.5V TC=150℃ 0.5 3.0 2N6130 VCE=60V;VBE=1.5V TC=150℃ 0.5 3.0 2N6131 VCE=80V; VBE=1.5V TC=150℃ 0.5 3.0 mA 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=2.5A ; VCE=4V 20 Transition frequency IC=0.2A ; VCE=4V 2.5 fT 2 V mA 100 MHz Inchange Semiconductor Product Specification 2N6129 2N6130 2N6131 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3