ISC 2N6290

Inchange Semiconductor
Product Specification
2N6288 2N6290 2N6292
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220 package
・Complement to PNP type:
2N6107; 2N6109 ;2N6111
APPLICATIONS
・Power amplifier and switching
circuits applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2N6288
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
2N6290
Open emitter
Emitter-base voltage
60
2N6292
80
2N6288
30
2N6290
UNIT
40
Open base
2N6292
VEBO
VALUE
50
V
V
70
Open collector
5
V
IC
Collector current
7
A
ICM
Collector current-peak
10
A
IB
Base current
3
A
PT
Total power dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
MAX
UNIT
3.125
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
Inchange Semiconductor
Product Specification
2N6288 2N6290 2N6292
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N6288
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6290
VCEsat-2
VBE-1
VBE-2
ICEO
ICEX
IEBO
hFE-1
hFE-2
fT
Collector-emitter
saturation voltage
IC=0.1A ;IB=0
Base-emitter on voltage
IC=3A;IB=0.3A
2N6290
IC=2.5A;IB=0.25A
2N6292
IC=2A;IB=0.2A
Collector cut-off current
Collector cut-off current
IC=3A ; VCE=4V
2N6290
IC=2.5A ; VCE=4V
2N6292
IC=2A ; VCE=4V
IC=7A ; VCE=4V
DC current gain
1.0
V
3.5
V
1.5
V
3.0
V
1.0
mA
2N6288
VCE=20V; IB=0
2N6290
VCE=40V; IB=0
2N6292
VCE=60V; IB=0
2N6288
VCE=40V; VBE=-1.5V
VCE=30V; BE=-1.5V,TC=125℃
0.1
2.0
2N6290
VCE=60V; VBE=-1.5V
VCE=50V; BE=-1.5V,TC=125℃
0.1
2.0
2N6292
VCE=80V; VBE=-1.5V
VCE=70V; BE=-1.5V,TC=125℃
0.1
2.0
VEB=5V; IC=0
1.0
Emitter cut-off current
UNIT
V
50
IC=7A;IB=3A
2N6288
Base-emitter on voltage
MAX
70
2N6288
Collector-emitter saturation voltage
TYP.
30
2N6292
VCEsat-1
MIN
2N6288
IC=3A ; VCE=4V
2N6290
IC=2.5A ; VCE=4V
2N6292
IC=2A ; VCE=4V
30
DC current gain
IC=7A ; VCE=4V
2.3
Transition frequency
IC=0.5A ; VCE=4V;f=1MHz
2.5
2
mA
mA
150
MHz
Inchange Semiconductor
Product Specification
2N6288 2N6290 2N6292
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3