ISC 2N6373

Inchange Semiconductor
Product Specification
2N6372 2N6373 2N6374
Silicon NPN Power Transistors
DESCRIPTION
・With TO-66 package
・Low collector saturation voltage
・Excellent safe operating area
APPLICATIONS
・Designed for switching and wide-band
amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
2N6372
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
2N6373
Open emitter
70
2N6374
50
2N6372
80
2N6373
Emitter-base voltage
UNIT
90
Open base
2N6374
VEBO
VALUE
60
V
V
40
Open collector
6
V
6
A
40
W
IC
Collector current
PD
Total Power Dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
4.37
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N6372 2N6373 2N6374
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N6372
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6373
MIN
TYP.
MAX
UNIT
80
IC=0.1A ;IB=0
V
60
40
2N6374
VCEsat-1
Collector-emitter saturation voltage
IC=2A; IB=0.2A
0.7
V
VCEsat-2
Collector-emitter saturation voltage
IC=6A; IB=0.6A
1.2
V
VBEsat-1
Base-emitter saturation voltage
IC=2A; IB=0.2A
1.2
V
VBEsat-2
Base-emitter saturation voltage
IC=6A; IB=0.6A
2.0
V
0.1
mA
ICEO
Collector cut-off current
2N6372
VCE=80V; IB=0
2N6373
VCE=60V; IB=0
2N6374
VCE=40V; IB=0
ICBO
Collector cut-off current
VCB=Rated VCB; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=6V; IC=0
0.1
mA
hFE
fT
DC current gain
Transition frequency
2N6372
IC=2A ; VCE=2V
2N6373
IC=2.5A ; VCE=2V
2N6374
IC=3A ; VCE=2V
IC=0.5A;VCE=10V;f=1MHz
2
20
100
4
MHz
Inchange Semiconductor
Product Specification
2N6372 2N6373 2N6374
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3