ISC 2N6674

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
2N6674/6675
DESCRIPTION
·High Power Dissipation
·High Switching Speed
·Collector-Emitter Breakdown Voltage: V(BR)CEO= 300V(Min)- 2N6674
= 400V(Min)- 2N6675
APPLICATIONS
Designed for high voltage switching applications such as:
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VCEX
VEBO
PARAMETER
VALUE
2N6674
450
2N6675
650
2N6674
300
2N6675
400
2N6674
450
2N6675
650
Collector-Base Voltage
UNIT
V
Collector-Emitter Voltage
Collector-Emitter Voltage
V
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
5.0
A
Collector Power [email protected]=25℃
6
Collector Power [email protected]=25℃
175
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃
PC
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.0
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
2N6674/6675
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N6674
V(BR)CEO
Collector-Emitter
Breakdown Voltage
MIN
MAX
UNIT
300
IC= 200mA ; IB= 0
2N6675
V
400
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 10A; IB= 2A
1.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 15A; IB= 5A
5.0
V
Base-Emitter Saturation Voltage
IC= 10A; IB= 2A
1.5
V
2N6674
VCE= 450V; VBE= -1.5V
0.1
2N6675
VCE= 650V; VBE= -1.5V
0.1
2N6674
VCB= 450V; IE= 0
1.0
2N6675
VCB= 650V; IE= 0
1.0
2.0
VBE(sat)
ICEX
ICBO
Collector
Cutoff Current
mA
Collector
Cutoff Current
mA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 3V
15
40
hFE-2
DC Current Gain
IC= 10A ; VCE= 2V
8
20
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
isc Website:www.iscsemi.cn
2
500
mA
pF