isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N6674/6675 DESCRIPTION ·High Power Dissipation ·High Switching Speed ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 300V(Min)- 2N6674 = 400V(Min)- 2N6675 APPLICATIONS Designed for high voltage switching applications such as: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VCEX VEBO PARAMETER VALUE 2N6674 450 2N6675 650 2N6674 300 2N6675 400 2N6674 450 2N6675 650 Collector-Base Voltage UNIT V Collector-Emitter Voltage Collector-Emitter Voltage V Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB Base Current-Continuous 5.0 A Collector Power Dissipation@Ta=25℃ 6 Collector Power Dissipation@TC=25℃ 175 TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ PC W THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N6674/6675 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6674 V(BR)CEO Collector-Emitter Breakdown Voltage MIN MAX UNIT 300 IC= 200mA ; IB= 0 2N6675 V 400 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 2A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 5A 5.0 V Base-Emitter Saturation Voltage IC= 10A; IB= 2A 1.5 V 2N6674 VCE= 450V; VBE= -1.5V 0.1 2N6675 VCE= 650V; VBE= -1.5V 0.1 2N6674 VCB= 450V; IE= 0 1.0 2N6675 VCB= 650V; IE= 0 1.0 2.0 VBE(sat) ICEX ICBO Collector Cutoff Current mA Collector Cutoff Current mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 3V 15 40 hFE-2 DC Current Gain IC= 10A ; VCE= 2V 8 20 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz isc Website：www.iscsemi.cn 2 500 mA pF