Inchange Semiconductor Product Specification 2SA1068 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High transition frequency APPLICATIONS ·For audio and general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -10 A ICM Collector current-peak -14 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA1068 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -2.0 V VBEsat Base-emitter saturation voltage IC=-5A ;IB=-0.5A -2.5 V ICBO Collector cut-off current VCB=-150V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-3A ; VCE=-4V Transition frequency IC=-0.5A ; VCE=-10V fT CONDITIONS MIN TYP. -150 UNIT V B B 2 MAX 60 150 50 MHz Inchange Semiconductor Product Specification 2SA1068 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3