ISC 2SA1180

Inchange Semiconductor
Product Specification
2SA1180
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3 package
·High power dissipations
APPLICATIONS
·For power switching amplifier and
general purpose applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-180
V
VCEO
Collector-emitter voltage
Open base
-180
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-10
A
IB
Base current
-4
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
B
TC=25℃
Inchange Semiconductor
Product Specification
2SA1180
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA ;IB=0
-180
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ;IE=0
-180
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ;IC=0
-6
V
VCEsat
Collector-emitter saturation voltage
IC=-5A; IB=-0.5A
-2.0
V
VBEsat
Base-emitter saturation voltage
IC=-5A; IB=-0.5A
-2.5
V
ICBO
Collector cut-off current
VCB=-180V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-0.1
mA
hFE
DC current gain
IC=-5A ; VCE=-4V
2
MIN
30
TYP.
MAX
UNIT
Inchange Semiconductor
Product Specification
2SA1180
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3