Inchange Semiconductor Product Specification 2SA1758 Silicon PNP Power Transistors · DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V -12 A 30 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA1758 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-50μA ,IC=0 -5 V VCEsat-1 Collector-emitter saturation voltage IC=-6A; IB=-0.3A -0.3 V VCEsat-2 Collector-emitter saturation voltage IC=-8A; IB=-0.4A -0.5 V VBEsat-1 Base-emitter saturation voltage IC=-6A; IB=-0.3A -1.2 V VBEsat-2 Base-emitter saturation voltage IC=-8A; IB=-0.4A -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE DC current gain IC=-2A ; VCE=-2V Transition frequency IC=-1A ; VCE=-10V fT CONDITIONS B hFE Classifications D E F 60-120 100-200 160-320 2 MIN TYP. 60 MAX UNIT 320 90 MHz Inchange Semiconductor Product Specification 2SA1758 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3