Inchange Semiconductor Product Specification 2SA885 Silicon PNP Power Transistors · DESCRIPTION ·With TO-126 package ·Complement to type 2SC1846 ·Low collector-emitter saturation voltage APPLICATIONS ·For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute Maximun Ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -45 V VCEO Collector-emitter voltage Open base -35 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -1 A ICM Collector current-peak -1.5 A 1.2*1 PC Collector power dissipation TC=25℃ W 2 5* Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink Inchange Semiconductor Product Specification 2SA885 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-2mA;IB=0 -35 V V(BR)CBO Collector-base breakdown voltage IC=-10μA ;IE=0 -45 V VCEsat Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA -0.5 V ICBO Collector cut-off current VCB=-20V; IE=0 -0.1 μA ICEO Collector cut-off current VCE=-20V; IB=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE-1 DC current gain IC=-0.5A ; VCE=-10V 85 hFE-2 DC current gain IC=-1A ; VCE=-5V 50 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 20 fT Transition frequency IC=50mA ; VCB=-10V,f=200MHz 200 CONDITIONS hFE-1 Classifications Q R S 85-170 120-240 170-340 2 MIN TYP. MAX UNIT 340 30 pF MHz Inchange Semiconductor Product Specification 2SA885 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SA885 Silicon PNP Power Transistors 4 Inchange Semiconductor Product Specification 2SA885 Silicon PNP Power Transistors 5