ISC 2SA940

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
2SA940
DESCRIPTION
·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -150V(Min)
·DC Current Gain
: hFE= [email protected] IC= -0.5A
·Complement to Type 2SC2073
APPLICATIONS
·Designed for use in general purpose power amplifier ,
vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1.5
A
ICM
Collector Current-Peak
-3.0
A
PC
Total Power Dissipation
@ TC=25℃
25
W
TJ
Junction Temperature
150
℃
-55~150
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
5.0
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
2SA940
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -5mA ; IB= 0
-150
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= -1mA ; IE= 0
-150
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= -1mA ; IC= 0
-5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -0.5A; IB= -50mA
-1.5
V
VBE(on)
Base-Emitter On Voltage
IC= -0.5A ; VCE= -5V
-0.85
V
ICBO
Collector Cutoff Current
VCB= -120V ; IE= 0
-10
μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-10
μA
hFE
DC Current Gain
IC= -0.5A ; VCE= -10V
40
Current-Gain—Bandwidth Product
IC= -0.5A;VCE= -10V;ftest= 1MHz
4
fT
isc Website:www.iscsemi.cn
CONDITIONS
MIN
B
2
TYP.
MAX
UNIT
140
MHz