ISC 2SB1019

Inchange Semiconductor
Product Specification
2SB1019
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220Fa package
・Low saturation voltage
・Complement to type 2SD1412
APPLICATIONS
・High current switching applications
・Power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-70
V
VCEO
Collector -emitter voltage
Open base
-50
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-7
A
IB
Base current
-1
A
PC
Collector power dissipation
Ta=25℃
2
TC=25℃
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SB1019
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-4A ;IB=-0.4A
-0.2
-0.4
V
VBEsat
Base-emitter saturation voltage
IC=-4A ;IB=-0.4A
-0.9
-1.2
V
ICBO
Collector cut-off current
VCB=-70V; IE=0
-30
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-50
μA
hFE-1
DC current gain
IC=-1A ; VCE=-1V
70
hFE-2
DC current gain
IC=-4A ; VCE=-1V
30
fT
Transition frequency
IC=-1A ; VCE=-4V
10
MHz
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
250
pF
0.2
μs
2.5
μs
0.5
μs
-50
UNIT
V
240
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
RL=10Ω
IB1=-IB2=-0.3A
VCC=-30V
hFE-1 Classifications
O
Y
70-140
120-240
2
Inchange Semiconductor
Product Specification
2SB1019
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3