ISC 2SB1056

Inchange Semiconductor
Product Specification
2SB1056
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-3PFa package
・Complement to type 2SD1487
・High fT
・Satisfactory linearity of hFE
・Wide area of safe operation
APPLICATIONS
・For high power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-140
V
VCEO
Collector-emitter voltage
Open base
-140
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-7
A
ICP
Collector current-peak
-12
A
PC
Collector power dissipation
TC=25℃
80
W
3
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SB1056
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
VBE
‹
CONDITIONS
MAX
UNIT
IC=-5A ;IB=-0.5A
-2.0
V
Base-emitter on voltage
IC=-5A ; VCE=-5V
-1.8
V
ICBO
Collector cut-off current
VCB=-140V; IE=0
-50
μA
IEBO
Emitter cut-off current
VEB=-3V; IC=0
-50
μA
hFE-1
DC current gain
IC=-20mA ; VCE=-5V
20
hFE -2
DC current gain
IC=-1A ; VCE=-5V
40
hFE -3
DC current gain
IC=-5A ; VCE=-5V
20
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
330
pF
fT
Transition frequency
IC=-0.5A ; VCE=-5V
20
MHz
hFE-2 classifications
R
Q
P
40-80
60-120
100-200
2
MIN
TYP.
200
Inchange Semiconductor
Product Specification
2SB1056
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3