Inchange Semiconductor Product Specification 2SB1017 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1408 APPLICATIONS ・For power amplifications ・Recommended for 20-25W high-fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V -4 A -0.4 A IC Collector current IB Base current PC Collector power dissipation Ta=25℃ 2.0 TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1017 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.0 -1.7 V VBE Base-emitter on voltage IC=-3A ;VCE=-5V -1.0 -1.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -30 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 μA hFE-1 DC current gain IC=-0.5A ; VCE=-5V 40 hFE-2 DC current gain IC=-3A ; VCE=-5V 15 Transition frequency IC=-0.5A; VCE=-5V Collector output capacitance IE=0, f=1MHz ; VCB=-10V fT COB CONDITIONS hFE-1 Classifications R O Y 40-80 70-140 120-240 2 MIN TYP. MAX -80 UNIT V 240 9 MHz 130 pF Inchange Semiconductor Product Specification 2SB1017 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification 2SB1017 Silicon PNP Power Transistors 4