isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1217 DESCRIPTION ·High Collector Current -IC= -3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD1818 APPLICATIONS ·Designed for use in DC-DC converter, driver, solenid and motor . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICP Collector Current-Pulse -5 A IB Base Current-Continuous -0.5 A B Collector Power Dissipation @ TC=25℃ 10 Collector Power Dissipation @ Ta=25℃ 1.3 Junction Temperature 150 ℃ -55~150 ℃ W PC TJ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1217 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A -0.3 V VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A -1.2 V ICBO Collector Cutoff Current VCB= -60V; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -10 μA hFE-1 DC Current Gain IC= -0.2A ; VCE= -2V 60 hFE-2 DC Current Gain IC= -0.6A ; VCE= -2V 100 hFE-3 DC Current Gain IC= -2.0A ; VCE= -2V 50 B B 400 Switching Times ton Turn-On Time tstg Storage Time tf IC= -1.0A; IB1= -IB2= -0.1A; RL= 10Ω; VCC≈ -10V Fall Time hFE-2 Classifications M L K 100-200 160-320 200-400 isc Website：www.iscsemi.cn 2 0.5 μs 2.0 μs 0.5 μs