ISC 2SB1273

Inchange Semiconductor
Product Specification
2SB1273
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220 package
・Low collector saturation voltage
APPLICATIONS
・Designed for use in low frequency
power amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-3
A
ICM
Collector current-peak
-8
A
PC
Collector power dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SB1273
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-5mA ,RBE=∞
-60
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ,IE=0
-60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ,IC=0
-6
V
Collector-emitter saturation voltage
IC=-2A; IB=-0.2A
-0.4
-1.0
V
VBE
Base-emitter on voltage
IC=-0.5A ; VCE=-5V
-0.8
-1.0
V
ICBO
Collector cut-off current
VCB=-40V; IE=0
-100
μA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-100
μA
hFE-1
DC current gain
IC=-0.5A ; VCE=-5V
70
hFE-2
DC current gain
IC=-3A ; VCE=-5V
20
COB
Output capacitance
IE=0 ; VCB=-10V,f=1MHz
60
pF
fT
Transition frequency
IC=-0.5A ; VCE=-5V
100
MHz
VCEsat
‹
CONDITIONS
hFE-1 Classifications
Q
R
S
70-140
100-200
140-280
2
MIN
TYP.
MAX
UNIT
280
Inchange Semiconductor
Product Specification
2SB1273
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3