Inchange Semiconductor Product Specification 2SB1274 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1913 ・High reliability. ・High breakdown voltage ・Low saturation voltage. ・Wide area of safe operation APPLICATIONS ・60V/3A low-frequency power amplifier ・General power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -3 A ICM Collector current-peak -8 A PC Collector dissipation TC=25℃ 20 W 2 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1274 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -60 V V(BR)CEO Collector-emitter breakdown voltage IC=-5mA; RBE=∞ -60 V V(BR)EBO Base-emitter breakdown voltage IE=-1mA; IC=0 -6 V Collector-emitter saturation voltage IC=-2A ; IB=-0.2A -0.4 -1.0 V VBE Base-emitter voltage IC=-0.5A ; VCE=-5V -0.8 -1.0 V ICBO Collector cut-off current VCB=-40V;IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-4V;IC=0 -0.1 mA hFE-1 DC current gain IC=-0.5A ; VCE=-5V 70 hFE-2 DC current gain IC=-3A ; VCE=-5V 20 fT Transition frequency IC=-0.5A ; VCE=-5V 100 MHz COB Output capacitance IE=0; VCB=-10V;f=1MHz 60 pF VCEsat hFE-1 classifications Q R S 70-140 100-200 140-280 2 280 Inchange Semiconductor Product Specification 2SB1274 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SB1274 Silicon PNP Power Transistors 4