isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) ·High DC Current Gain: hFE= 1500(Min)@ (VCE= -3V, IC= -1A) ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -1A, IB= -2mA) B APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3 A IB Base Current-Continuous -0.5 A Collector Power Dissipation @Ta=25℃ 2 W PC Collector Power Dissipation @TC=25℃ 20 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn 2SB1411 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1411 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1A; IB= -2mA -1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -2A; IB= -8mA -2.5 V Base-Emitter Saturation Voltage IC= -1A; IB= -2mA -2.2 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -2.5 mA hFE-1 DC Current Gain IC= -1A; VCE= -3V 1500 hFE-2 DC Current Gain IC= -2A; VCE= -3V 1000 VBE(sat) CONDITIONS MIN TYP. MAX -100 UNIT V B B B 15000 Switching Times ton Turn-on Time tstg Storage Time tf IC= -1A, IB1= -IB2= -2mA, VCC≈ -30V; RL= 30Ω Fall Time isc Website：www.iscsemi.cn 2 1.0 μs 3.0 μs 2.0 μs