ISC 2SB1455

Inchange Semiconductor
Product Specification
2SB1455
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220F package
・Complement to type 2SD2203
・Low collector saturation voltage:
・Large current capacity
APPLICATIONS
・High current power switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-90
V
VCEO
Collector-emitter voltage
Open base
-80
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-7
A
ICM
Collector current-peak
-12
A
PC
Collector dissipation
Ta=25℃
2.0
TC=25℃
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SB1455
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA ;RBE=∞
-80
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ;IE=0
-90
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ;IC=0
-6
V
Collector-emitter saturation voltage
IC=-4A ;IB=-0.4A
-0.5
V
ICBO
Collector cut-off current
VCB=-80V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-0.1
mA
hFE-1
DC current gain
IC=-1A ; VCE=-2V
70
hFE-2
DC current gain
IC=-4A ; VCE=-2V
30
Transition frequency
IC=-1A ; VCE=-5V
VCEsat
fT
CONDITIONS
MIN
TYP.
MAX
UNIT
280
20
MHz
0.2
μs
0.7
μs
0.2
μs
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-2.0A IB1=-IB2=-0.2A
VCC=-50V ,RL=25Ω
hFE-1 Classifications
Q
R
S
70-140
100-200
140-280
2
Inchange Semiconductor
Product Specification
2SB1455
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
2SB1455
Silicon PNP Power Transistors
4