Inchange Semiconductor Product Specification 2SB1642 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2.5A,IB=-0.25A ・Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS ・Audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -4 A IB Base current -1 A PC Collector power dissipation Ta=25℃ 2.0 TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1642 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-2.5A; IB=-0.25A -0.7 -1.5 V VBE Base-emitter voltage IC=-0.5A;VCE=-5V -0.75 -1.0 V ICBO Collector cut-off current VCB=-60V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-7V; IC=0 -10 μA hFE-1 DC current gain IC=-0.5A ; VCE=-5V 100 hFE-2 DC current gain IC=-3A ; VCE=-5V 20 Transition frequency IC=-0.5A ; VCE=-5V 9.0 MHz Collector output capacitance IE=0; f=1MHz;VCB=-10V 50 pF fT COB CONDITIONS 2 MIN TYP. MAX -60 UNIT V 320 Inchange Semiconductor Product Specification 2SB1642 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SB1642 Silicon PNP Power Transistors 4