Inchange Semiconductor Product Specification 2SB434 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD234 APPLICATIONS ・For low frequency power amplifier and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V -3 A IC Collector current PC Collector power dissipation 1.5 W TC=25℃ 25 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB434 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-5mA ,IB=0 -50 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ,IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ,IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.2 V VBEsat Base-emitter saturation voltage IC=-3A; IB=-0.3A -1.5 V ICBO Collector cut-off current VCB=-40V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -10 μA hFE DC current gain IC=-0.5A ; VCE=-1V COB Output capacitance IE=0 ; VCB=-10V,f=1MHz 90 pF fT Transition frequency IC=-0.5A ; VCE=-10V 3 MHz CONDITIONS hFE Classifications R O Y 40-80 70-140 120-240 2 MIN TYP. 40 MAX UNIT 240 Inchange Semiconductor Product Specification 2SB434 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3