ISC 2SB676

Inchange Semiconductor
Product Specification
2SB676
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220C package
・High DC Current Gain
: hFE=2000 @VCE=-2V, IC=-1A (Min.)
・DARLINGTON
APPLICATIONS
・For switching applications
・Hammer drive, pulse motor drive applications
・Power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector; connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-80
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current-DC
-4
A
PC
Collector power dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SB676
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA, IB=0
VCEsat
Collector-emitter saturation voltage
IC=-3A ,IB=-6mA
-1.5
V
VBEsat
Base-emitter saturation voltage
IC=-3A ,IB=-6mA
-2.0
V
ICBO
Collector cut-off current
VCB=-100V, IE=0
-20
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-2.5
mA
hFE-1
DC current gain
IC=-1A ; VCE=-2V
2000
hFE-2
DC current gain
IC=-3A ; VCE=-2V
1000
-80
UNIT
V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
VCE=-30V, IB1=-IB2=-6mA
RL=10Ω
2
0.15
μs
0.80
μs
0.40
μs
Inchange Semiconductor
Product Specification
2SB676
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3