isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB703 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min) ·DC Current Gain: hFE= 40~200 @IC= -0.5A ·Complement to Type 2SD743 APPLICATIONS ·Designed for use in audio frequency power amplifier, low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -6 A IB Base Current-Continuous -1 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.125 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB703 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 -80 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -0.3A -2.0 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -3V; IC= 0 -10 μA hFE-1 DC Current Gain IC= -20mA; VCE= -5V 30 hFE-2 DC Current Gain IC= -0.5A; VCE= -5V 40 Current-Gain—Bandwidth Product IC= -0.1A; VCE= -5V; ftest= 1.0MHz 10 fT CONDITIONS B B hFE-2 Classifications S R Q 40-80 60-120 100-200 isc Website：www.iscsemi.cn MIN 2 TYP. MAX UNIT 200 MHz