Inchange Semiconductor Product Specification 2SB885 Silicon PNP Power Transistor DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC durrent gain ・Low collector saturation voltage ・Complement to type 2SD1195 APPLICATIONS ・For motor drivers,printer hammer drivers,relay drivers,voltage regulator control applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -110 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -6 V IC Collector current-DC -5 A ICM Collector current-Pulse -8 A PC Collector power dissipation TC=25℃ 35 Ta=25℃ 1.75 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB885 Silicon PNP Power Transistor CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA, RBE=∞ -100 V V(BR)CBO Collector-base breakdown voltage IC=-5mA, IE=0 -110 V VCEsat Collector-emitter saturation voltage IC=-2.5A ,IB=-5mA -1.5 V VBE sat Base-emitter saturation voltage IC=-2.5A ,IB=-5mA -2.0 V ICBO Collector cut-off current VCB=-80V, IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -3.0 mA hFE DC current gain IC=-2.5A ; VCE=-3V Transition frequency VCE=-5V, IC=-2.5A fT CONDITIONS MIN TYP. MAX UNIT 1500 20 MHz 0.7 μs 1.3 μs 1.5 μs Switching times ton Turn-on time tstg Storage time tf Turn-off time IC=-2A ; VCC=-50V IB1=-IB2=-4mA;RL=25Ω 2 Inchange Semiconductor Product Specification 2SB885 Silicon PNP Power Transistor PACKAGE OUTLINE Fig.2 Outline dimensions 3