isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB944 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@ IC= -3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V (Min) ·Good Linearity of hFE ·Complement to Type 2SD1269 APPLICATIONS ·Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -8 A Collector Power Dissipation @ TC=25℃ 35 PC W Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 2 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB944 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.15A -0.5 V Base-Emitter Saturation Voltage IC= -3A; IB= -0.15A -1.5 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -50 μA hFE-1 DC Current Gain IC= -0.1A; VCE= -2V 45 hFE-2 DC Current Gain IC= -1A; VCE= -2V 60 Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V; f= 10MHz VBE(sat) fT CONDITIONS MIN TYP. MAX -80 UNIT V B B 260 30 MHz Switching times ton Turn-on Time tstg Storage Time tf IC= -1A ; IB1= -IB2= -0.1A Fall Time hFE-2 classifications Q P 90-180 130-260 isc Website：www.iscsemi.cn 2 0.15 μs 0.8 μs 0.15 μs