ISC 2SC1172

Inchange Semiconductor
Product Specification
2SC1172
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・High breakdown voltage
・High speed switching
APPLICATIONS
・For use in color TV horizontal
output applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
6
V
5
A
50
W
IC
Collector current
PT
Total power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Tmb=25℃
Inchange Semiconductor
Product Specification
2SC1172
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ; IB=0
600
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=4A; IB=1A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=4A; IB=1A
1.5
V
ICBO
Collector cut-off current
VCB=800V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=6V; IC=0
0.1
mA
hFE
DC current gain
IC=2A ; VCE=10V
Transition frequency
IC=0.5A ; VCE=10V
fT
2
10
3
MHz
Inchange Semiconductor
Product Specification
2SC1172
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3