isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2292 DESCRIPTION ·High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current-Continuous 4 A IBM Base Current-Peak 8 A PC Collector Power Dissipation @TC=25℃ 80 W Tj Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2292 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 200mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 0.7 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A 1.5 V hFE-1 DC Current Gain IC= 4A; VCE= 2V 15 hFE-2 DC Current Gain IC= 8A; VCE= 2V 8 ICBO Collector Cutoff Current VCB= 500V; IE= 0 0.1 mA ICEO Collector Cutoff Current VCE= 400V; IB= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA Current-Gain—Bandwidth Product IC= 1A; VCE= 10V fT 400 UNIT V B B 20 MHz Switching Times ton Turn-On Time tstg Storage Time tf Fall Time isc Website：www.iscsemi.cn IC=4A; IB1=- IB2= 0.8A; RL= 5Ω; VBB2= 4V 1.0 μs 3.0 μs 0.7 μs