Inchange Semiconductor Product Specification 2SC2361 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·Complement to type 2SA1123 ·Low collector saturation voltage APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 70 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 4 A PC Collector dissipation 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2361 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A; IB=0 70 V V(BR)EBO Emitter-base breakdown voltage IE=1m A; IC=0 6 V Collector-emitter saturation voltage IC=4A; IB=0.4A 1.5 V VBE Base-emitter on voltage IC=3A ; VCE=4V 2.0 V ICBO Collector cut-off current VCB=100V; IE=0 10 μA IEBO Emitter cut-off current VEB=6V; IC=0 10 μA hFE DC current gain IC=2.5A ; VCE=3V Transition frequency IC=0.5A ; VCE=10V VCEsat fT CONDITIONS 2 MIN TYP. 50 MAX UNIT 240 70 MHz Inchange Semiconductor Product Specification 2SC2361 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3