Inchange Semiconductor Product Specification 2SC2486 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SA1062 ・High collector power dissipation APPLICATIONS ・High power audio frequency amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 7 A ICM Collector current-peak 12 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2486 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 2.0 V VBE Base-emitter on voltage IC=5A;VCE=5V 1.8 V ICBO Collector cut-off current VCB=120V; IE=0 50 μA IEBO Emitter cut-off current VEB=3V; IC=0 50 μA hFE-1 DC current gain IC=0.02A ; VCE=5V 20 hFE-2 DC current gain IC=1A ; VCE=5V 40 hFE-3 DC current gain IC=5A ; VCE=5V 20 Transition frequency IC=0.5A ; VCE=5V fT CONDITIONS hFE-2 Classifications R Q P 40-80 60-120 100-200 2 MIN TYP. MAX 120 UNIT V 200 20 MHz Inchange Semiconductor Product Specification 2SC2486 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3