Inchange Semiconductor Product Specification 2SC2615 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-247 package ・High voltage,high speed APPLICATIONS ・For high voltage,high speed and high power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-247) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 8 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2615 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0 400 V V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A 1.0 V VBEsat Base-emitter saturation voltage IC=4A ;IB=0.8A 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=4A ; VCE=5V 15 hFE-2 DC current gain IC=8A ; VCE=5V 7 2 MIN TYP. MAX UNIT Inchange Semiconductor Product Specification 2SC2615 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3