isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2769 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 200V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid state relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VCEO(SUS) Collector-Emitter Voltage 200 V Emitter-Base voltage 7 V IC Collector Current-Continuous 10 A IB Base Current-Continuous 5 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ -55~150 ℃ VEBO B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2769 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 200 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1A; IB= 0 200 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA ; IE= 0 250 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA ; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.8A 0.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A 1.1 V ICBO Collector Cutoff Current VCB= 250V; IE=0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC=0 0.1 mA hFE DC Current Gain IC= 2A; VCE= 5V B MIN B B 20 TYP. MAX UNIT 60 Switching times ton Turn-on Time tstg Storage Time tf IC= 6A , IB1= -IB2= 1.2A RL= 10Ω;PW=20μs Duty Cycle≤2% Fall Time isc Website：www.iscsemi.cn 2 0.8 μs 2.0 μs 0.5 μs