Inchange Semiconductor Product Specification 2SC2706 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P(I) package ・High power dissipation APPLICATIONS ・For audio power amplifier and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 140 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 10 A IB Base current 2 A PT Total power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2706 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=25mA ,IB=0 140 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ,IC=0 5 V Collector-emitter saturation voltage IC=5A; IB=0.5A 2.0 V ICBO Collector cut-off current VCB=140V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=1A ; VCE=5V 55 hFE-2 DC current gain IC=5A ; VCE=5V 35 Transition frequency IC=1A ; VCE=5V VCEsat fT CONDITIONS 2 MIN TYP. MAX UNIT 160 90 MHz Inchange Semiconductor Product Specification 2SC2706 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3