ISC 2SC3220

Inchange Semiconductor
Product Specification
2SC3220
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-247 package
·Switching power transistor
·High breakdown voltage
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-247) and symbol
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
230
V
VCEO
Collector-emitter voltage
Open base
230
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current (DC)
10
A
IB
Base current
4
A
PD
Total power dissipation
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
MAX
UNIT
1.56
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2SC3220
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A; IB=0
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=0.5A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=0.5A
1.5
V
At rated voltage
0.1
mA
0.1
mA
ICBO
CONDITIONS
MIN
MAX
230
UNIT
V
Collector cut-off current
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
At rated voltage
hFE-1
DC current gain
IC=10A ; VCE=2V
15
hFE-2
DC current gain
IC=1mA ; VCE=2V
5
Transition frequency
IC=0.6A ; VCE=10V
fT
TYP.
2
20
MHz
Inchange Semiconductor
Product Specification
2SC3220
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3