Inchange Semiconductor Product Specification 2SC3258 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SA1293 ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 5 A ICM Collector current-Peak 8 A IB Base current 1 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3258 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector -emitter breakdown voltage IC=10mA ,IB=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.15A 0.4 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.15A 1.2 V ICBO Collector cut-off current VCB=100V; IE=0 1 μA IEBO Emitter cut-off current VEB=7V; IC=0 1 μA hFE-1 DC current gain IC=1A ; VCE=1V 70 hFE-2 DC current gain IC=3A ; VCE=1V 40 Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 80 pF fT Transition frequency IC=1A ; VCE=4V 120 MHz 0.2 μs 1.0 μs 0.1 μs 80 UNIT V 240 Switching times ton Turn-on time ts Storage time tf Fall time IC=3.0A IB1=- IB2=0.15A RL=10Ω;VCC≈30V hFE-1 Classifications O Y 70-140 120-240 2 Inchange Semiconductor Product Specification 2SC3258 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC3258 Silicon NPN Power Transistors 4