isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3353 · DESCRIPTION ·Collector-Emiiter Sustaining Voltage: VCEO(SUS)= 500V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 3A ·High Speed Switching APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 3 A Collector Power Dissipation @Ta=25℃ 2 B PC Tj Tstg W Collector Power Dissipation @TC=25℃ 40 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3353 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; L= 25mH VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA hFE-1 DC Current Gain IC= 0.1A; VCE= 5V 15 hFE-2 DC Current Gain IC= 3A; VCE= 5V 8 Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V fT CONDITIONS MIN TYP. MAX 500 UNIT V B B 3 MHz Switching Times; Resistive Load ton Turn-on Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 3A; IB1= -IB2= 0.6A; VCC= 200V 1.0 μs 3.0 μs 1.0 μs