Inchange Semiconductor Product Specification 2SC3345 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA1328 ・Low collector saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 12 A IB Base current 2 A PC Collector power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3345 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=50mA ,IB=0 VCEsat Collector-emitter saturation voltage IC=6A; IB=0.3A 0.4 V VBEsat Base-emitter saturation voltage IC=6A; IB=0.3A 1.2 V ICBO Collector cut-off current VCB=60V; IE=0 10 μA IEBO Emitter cut-off current VEB=6V; IC=0 10 μA hFE-1 DC current gain IC=1A ; VCE=1V 70 hFE-2 DC current gain IC=6A ; VCE=1V 40 Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 180 pF fT Transition frequency IC=1A ; VCE=5V 90 MHz 0.2 μs 1.0 μs 0.2 μs 50 UNIT V 240 Switching times ton Turn-on time ts Storage time tf Fall time IC=6.0A IB1=- IB2=0.3A RL=5Ω;VCC=30V hFE-1 Classifications O Y 70-140 120-240 2 Inchange Semiconductor Product Specification 2SC3345 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC3345 Silicon NPN Power Transistors 4