isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC3519/A DESCRIPTION ·Collector-Emitter Breakdown VoltageV(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A ·Good Linearity of hFE ·Complement to Type 2SA1386/A APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER 2SC3519 VCBO VCEO UNIT 160 Collector-Base Voltage V 2SC3519A 180 2SC3519 160 Collector-Emitter Voltage V 2SC3519A VEBO VALUE 180 Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous 4 A PC Collector Power Dissipation @ TC=25℃ 130 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC3519/A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC3519 V(BR)CEO Collector-Emitter Breakdown Voltage MAX IC= 25mA ; IB= 0 Collector-Emitter Saturation Voltage 2SC3519 ICBO TYP. UNIT 160 2SC3519A VCE(sat) MIN V 180 IC= 5.0A; IB= 0.5A 2.0 VCB= 160V; IE= 0 100 Collector Cutoff Current V μA 2SC3519A VCB= 180V; IE= 0 100 100 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 5A ; VCE= 4V COB Output Capacitance IE= 0; VCB= 10V;ftest= 1.0MHz 250 pF Current-Gain—Bandwidth Product IE= -2A ; VCE= 12V 50 MHz 0.2 μs 1.3 μs 0.45 μs fT 50 180 Switching Times ton Turn-on Time tstg Storage Time tf IC= 10A ,RL= 4Ω, IB1= -IB2= 1A,VCC= 40V Fall Time hFE Classifications O P Y 50-100 70-140 90-180 isc Website：www.iscsemi.cn 2