isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4429 DESCRIPTION ·High Breakdown Voltage: V(BR)CEO= 800V(Min) ·Fast Switching speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector Current-Pulse 25 A IB Base Current-Continuous 4 A Collector Power Dissipation @ TC=25℃ 60 B PC W Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 3 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4429 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC=5mA; RBE=∞ 800 V VCEX(SUS) Collector-Emitter Sustaining Voltage IC= 4A; L=1mH, IB1=-IB2=0.8A Clamped 800 V V(BR)CBO Collector-Base Breakdown Voltage IC=1mA; IE=0 1100 V V(BR)EBO Emitter-Base Breakdown Voltage IE=1mA; IC=0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC=0.6A ; VCE= 5V 10 hFE-2 DC Current Gain IC= 3A ; VCE= 5V 8 COB Output Capacitance IE= 0 ; VCB= 10V; ftest=1.0MHz 155 pF Current-Gain—Bandwidth Product IC= 0.6A ; VCE= 10V 15 MHz fT CONDITIONS MIN TYP. B B MAX UNIT 40 Switching times ton Turn-on Time tstg Storage Time tf IC= 6A , IB1=1.2A; IB2= -2.4A RL= 66.7Ω; VCC=400V Fall Time hFE-1 Classifications K L M 10-20 15-30 20-40 isc Website：www.iscsemi.cn 2 0.5 μs 3.0 μs 0.3 μs INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Website：www.iscsemi.cn isc Product Specification 2SC4429