Inchange Semiconductor Product Specification 2SC4448 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High voltage ,high frequency APPLICATIONS ・Chroma output applications for HDTV ・Video output applications for highresolution display PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 250 V VCEO Collector-emitter voltage Open base 250 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 150 mA ICM Collector current-peak 300 mA IB Base current 50 mA PC Collector dissipation Ta=25℃ 2 TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC4448 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBEsat MAX UNIT IC=50mA ;IB=5mA 1.0 V Base-emitter saturation voltage IC=50mA ;IB=5mA 1.0 V ICBO Collector cut-off current VCB=200V; IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=10mA ; VCE=10V 40 hFE-2 DC current gain IC=100mA ; VCE=10V 20 Transition frequency IC=40mA ; VCE=10V 240 MHz Collector output capacitance f=1MHz;VCB=30V 3.3 pF fT COB CONDITIONS 2 MIN TYP. 200 Inchange Semiconductor Product Specification 2SC4448 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC4448 Silicon NPN Power Transistors 4