isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4580 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 450V(Min) ·Fast Switching speed APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 450 V VCEX Collector-Emitter Voltage VEB= 5V 600 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current-Continuous 4 A IBM Base Current-Peak 8 A PT Total Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4580 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A 1.5 V ICBO Collector Cutoff Current At rated Voltage 100 μA ICEO Collector Cutoff Current At rated Voltage 100 μA IEBO Emitter Cutoff Current At rated Voltage 100 μA hFE-1 DC Current Gain IC= 4A; VCE= 5V 10 hFE-2 DC Current Gain IC= 1mA; VCE= 5V 5 Current-Gain—Bandwidth Product IC= 0.8A; VCE= 10V fT 450 UNIT V B B 20 MHz Switching times ton Turn-on Time tstg Storage Time tf IC= 4A, IB1= 0.8A; IB2= -1.6A RL= 37.5Ω; VBB2= 4V Fall Time isc Website：www.iscsemi.cn 2 0.5 μs 2.0 μs 0.2 μs