isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4596 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.3V(Max)@ IC= 3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 60V (Min) ·Complement to Type 2SA1757 APPLICATIONS ·Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A Collector Power Dissipation @ TC=25℃ 25 PC W Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 2 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4596 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 3A ; IB= 0.3A, L= 1mH 60 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 5 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.15A 0.3 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.2A 0.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 3A; IB= 0.15A 1.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 4A; IB= 0.2A 1.5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE DC Current Gain IC= 1A ; VCE= 2V Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V 120 MHz Output Capacitance IE=0; VCB= 10V; ftest= 1.0MHz 80 pF fT COB B B B B 100 320 Switching times ton Turn-on Time tstg Storage Time tf IC= 3A ; IB1= -IB2= 0.15A RL= 10Ω;VCC≈ 30V Fall Time hFE classifications E F 100-200 160-320 isc Website：www.iscsemi.cn 2 0.3 μs 1.5 μs 0.3 μs