ISC 2SC4764

Inchange Semiconductor
Product Specification
2SC4764
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3P(H)IS package
・High speed
・High voltage
・Low saturation voltage
・Bult-in damper diode
APPLICATIONS
・Horizontal deflection output for medium
resolution display
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
±6
A
ICM
Collector current-Peak
±12
A
IB
Base current
3
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC4764
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)EBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
5
UNIT
Emitter-base breakdown voltage
IE=300mA ;IC=0
VCEsat
Collector-emitter saturation voltage
IC=4A; IB=0.8A
5
V
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.8A
1.5
V
ICBO
Collector cut-off current
VCB=1500V; IE=0
1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
83
250
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
8
hFE-2
DC current gain
IC=4A ; VCE=5V
5
Cob
Collector output capacitance
IE=0 ; VCB=10V,f=1MHz
170
VF
Diode forward voltage
IF=4A
1.2
fT
Transition frequency
IC=0.1A ; VCE=10V
1
V
12
9
pF
1.8
3
V
MHz
Switching times resistive load
ts
Storage time
tf
Fall time
ICP=4A;IB1=0.8A
IB2=-1.6A; RL=51Ω
2
1.6
2.5
μs
0.1
0.2
μs
Inchange Semiconductor
Product Specification
2SC4764
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
Inchange Semiconductor
Product Specification
2SC4764
Silicon NPN Power Transistors
4