Inchange Semiconductor Product Specification 2SC4963 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High breakdown voltage ・High speed switching ・Built-in damper diode APPLICATIONS ・Color TV horizontal deflection output ・Color display horizontal deflection output PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1700 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 5 V 8 A 50 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC4963 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 VCE(sat) Collector-emitter saturation voltage IC=7A ; IB=1.4A 5.0 V VBE(sat) Base-emitter saturation voltage IC=7A ; IB=1.4A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 50 250 mA hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=7A ; VCE=5V 5 2 MIN TYP. MAX 800 UNIT V Inchange Semiconductor Product Specification 2SC4963 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3