ISC 2SC5271

Inchange Semiconductor
Product Specification
2SC5271
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220F package
APPLICATIONS
・For resonant switching regulator and
general purpose applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
200
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
5
A
ICM
Collector current-peak
10
A
IB
Base current
2
A
PC
Collector power dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC5271
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=2.5A;IB=0.5A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=2.5A;IB=0.5A
1.5
V
ICBO
Collector cut-off current
VCB=300V; IE=0
100
μA
IEBO
Emitter cut-off current
VEB=7V; IC=0
100
μA
hFE-1
DC current gain
IC=2.5A ; VCE=2V
10
hFE-2
DC current gain
IC=1mA ; VCE=2V
15
fT
Transition frequency
IE=-0.5A ; VCE=12V
10
MHz
COB
Output capacitance
VCB=10V;f=1MHz
45
pF
200
UNIT
V
30
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=2.5A;IB1=0.5A;IB2=-1.0A
RL=60Ω;VCC=150V
Fall time
2
0.3
μs
1.0
μs
0.1
μs
Inchange Semiconductor
Product Specification
2SC5271
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3