isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5480 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for horizontal deflection output stage applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT 1500 V VCES Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC(peak) Collector Current-Peak 14 A IC(surge) Collector Current-Surge 28 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5480 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2.5A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 2.5A 1.5 V ICES Collector Cutoff Current VCE= 1500V; RBE= 0 500 μA hFE-1 DC Current Gain IC= 1A; VCE= 5V 5 25 hFE-2 DC Current Gain IC= 10A; VCE= 5V 4 7 Fall Time ICP= 7A, IB1= 2.4A; fH= 31.5kHz tf isc Website：www.iscsemi.cn 2 5 UNIT V 0.4 μs