isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6011/A DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 200V(Min)-2SC6011 = 200V(Min)-2SC6011A ·Good Linearity of hFE ·Complement to Type 2SA2151/A APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER 2SC6011 VCBO VCEO UNIT 200 Collector-Base Voltage V 2SC6011A 230 2SC6011 200 Collector-Emitter Voltage V 2SC6011A VEBO VALUE 230 Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A IB Base Current-Continuous 4 A PC Collector Power Dissipation @ TC=25℃ 160 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6011/A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC6011 V(BR)CEO Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage UNIT V 230 IC= 5A; IB= 0.5A B 0.5 V 10 μA 10 μA VCB= 200V ; IE= 0 Collector Cutoff Current 2SC6011A VCB= 230V ; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 3A ; VCE= 4V COB Output Capacitance IE= 0 ; VCB= 10V; ftest= 1.0MHz 270 pF Current-Gain—Bandwidth Product IE= -0.5A ; VCE= 12V 20 MHz fT MAX IC= 50mA ; IB= 0 2SC6011 ICBO TYP. 200 2SC6011A VCE(sat) MIN hFE Classifications O P Y 50-100 70-140 90-180 isc Website：www.iscsemi.cn 2 50 180