Inchange Semiconductor Product Specification 2SD1062 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Complement to type 2SB826 ・Wide area of safe operation APPLICATIONS ・Relay drivers, ・High-speed inverters, ・Converters ・General high-current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 12 A ICM Collector current-peak 15 A PC Collector power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1062 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=∞ 50 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 60 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V Collector-emitter saturation voltage IC=6A, IB=0.3A 0.4 V ICBO Collector cut-off current VCB=40V;IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=2V 70 hFE-2 DC current gain IC=5A ; VCE=2V 30 Transition frequency IC=1A ; VCE=5V VCEsat fT CONDITIONS MIN TYP. MAX UNIT 280 10 MHz 0.10 μs 0.05 μs 1.20 μs Switching times ton Turn-on time ts Storage time tf Fall time IC=5.0A IB1=- IB2=0.5A hFE-1 classifications Q R S 70-140 100-200 140-280 2 Inchange Semiconductor Product Specification 2SD1062 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SD1062 Silicon NPN Power Transistors 4