isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·High DC Current Gain: hFE= 2000( Min.) @(IC= 3A, VCE= 2V) ·Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max)@ (IC= 3A, IB= 3mA) B APPLICATIONS ·Driver for solenoid,motor and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn 2SD1170 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1170 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 3mA 2.0 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 μA hFE DC Current Gain IC= 3A; VCE= 2V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 70 pF Current-Gain—Bandwidth Product IE= -1A; VCE= 12V 50 MHz 0.5 μs 5.5 μs 1.5 μs fT CONDITIONS MIN TYP. MAX 120 UNIT V B B 2000 Switching Times ton Turn-on Time tstg Storage Time tf VCC= 30V, RL= 10Ω, IC= 3A; IB1= -IB2= 3mA, Fall Time isc Website：www.iscsemi.cn 2