ISC 2SD1175

Inchange Semiconductor
Product Specification
2SD1175
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・Built-in damper diode
・High voltage ,high power dissipation
・Wide area of safe operation
APPLICATIONS
・Line-operated horizontal deflection
output applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
1500
V
VEBO
Emitter-base voltage
Open collector
5
V
5
A
100
W
IC
Collector current
PT
Total power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD1175
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)EBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
Emitter-base breakdown voltage
IE=500mA; IC=0;
VCEsat
Collector-emitter saturation voltage
IC=4.0 A;IB=0.8 A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=4.0 A;IB=0.8 A
1.5
V
VCB=750V;IE=0
50
μA
VCB=1500V;IE=0
1.0
mA
ICBO
5
UNIT
Collector cut-off current
hFE-1
DC current gain
IC=1A ; VCE=5V
10
hFE-2
DC current gain
IC=4A ; VCE=10V
5
Diode forward voltage
IF=4A
VF
V
30
2.5
2
V
Inchange Semiconductor
Product Specification
2SD1175
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3