Inchange Semiconductor Product Specification 2SD1163,2SD1163A Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage APPLICATIONS ・TV horizontal deflection output, PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SD1163 VCBO Collector-base voltage 120 Open base 2SD1163A VEBO Emitter-base voltage V 350 2SD1163 Collector-emitter voltage UNIT 300 Open emitter 2SD1163A VCEO VALUE V 150 Open collector 6 V IC Collector current 7 A ICM Collector current-peak 10 A IC(surge) Collector current-surge 20 A 40 W TC=25℃ PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1163,2SD1163A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD1163 V(BR)CEO Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage 150 IE=10mA ;IC=0 6 ICBO hFE 2.0 V 1.0 IC=5A, IB=0.5A 1.2 V 2SD1163 VCB=300V;IE=0 5 mA 2SD1163A VCB=350V;IE=0 5 mA 0.5 μs Collector cut-offcurrent DC current gain V IC=5A, IB=0.5A Base-emitter saturation voltage UNIT V 2SD1163A VBEsat MAX 120 2SD1163 VCEsat TYP IC=10mA ;RBE=∞ 2SD1163A V(BR)EBO MIN IC=5A ; VCE=5V 25 Switching times tf Fall time ICM=3.5A;IB1 =0.45A 2 Inchange Semiconductor Product Specification 2SD1163,2SD1163A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3