Inchange Semiconductor Product Specification 2SD1279 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage;high speed ・Low collector saturation voltage APPLICATIONS ・Color TV horizontal deflection output applications ・Switching regulator applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1400 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 10 A IB Base current 5 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1279 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=8A; IB=2A 5.0 V VBEsat Base-emitter saturation voltage IC=8A; IB=2A 1.6 V ICBO Collector cut-off current VCB=500V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE DC current gain IC=2A ; VCE=5V Transition frequency IC=0.1A ; VCE=10V Collector output capacitance IE=0 ; VCB=10V;f=1MHz Fall time ICP=7A ;IB1(end)=1.5A fT COB tf CONDITIONS 2 MIN TYP. MAX 600 8 UNIT V 22 3 MHz 165 pF 1.0 μs Inchange Semiconductor Product Specification 2SD1279 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3