Inchange Semiconductor Product Specification 2SD1291 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Built-in damper diode ・High voltage ,high reliability ・Wide area of safe operation APPLICATIONS ・For color TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 1500 V 5 V VCBO Collector-base voltage Open emitter VEBO Emitter-base voltage Open collector IC Collector current (DC) 3 A ICM Collector current (Pulse) 13 A PC Collector power dissipation 65 W Tj Junction temperature 130 ℃ Tstg Storage temperature -55~130 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1291 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX Emitter-base breakdown voltage IE=500mA; IC=0 VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.8A 5.0 V VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.8A 1.5 V VCB=750V; IE=0 50 μA VCB=1500V; IE=0 1 mA ICBO hFE ts 5 UNIT V Collector cut-off current DC current gain IC=2.5A ; VCE=10V Storage time 4 12 4 8 μs 1 μs 2.2 V IC=2.5A ILeak=0.8A,LB=5μH tf VF Fall time Diode forward voltage IF=-4A,IB=0 2 Inchange Semiconductor Product Specification 2SD1291 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3